Zusammenfassung
Doping of [Ni(CN)₄]²⁻ complexes into Ba[Pt(CN)₄]•4H₂O single crystals quenches selectively the host emission. We studied the concentration dependence at different temperatures up to one mole percent [Ni(CN)₄]²⁻. It is shown that (at 80 K and x = 10⁻²) the E perpendicular c polarized emission (E = electric field vector, c = stack axis) is quenched by a factor of about 10³ without any intensity ...
Zusammenfassung
Doping of [Ni(CN)₄]²⁻ complexes into Ba[Pt(CN)₄]•4H₂O single crystals quenches selectively the host emission. We studied the concentration dependence at different temperatures up to one mole percent [Ni(CN)₄]²⁻. It is shown that (at 80 K and x = 10⁻²) the E perpendicular c polarized emission (E = electric field vector, c = stack axis) is quenched by a factor of about 10³ without any intensity change in the E parallel c polarized emission. The quenching mechanism is described by a phonon-assisted hopping process towards a quenching region with subsequent isotropic radiationless energy transfer to the quencher.
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