Spin accumulation in the extrinsic spin Hall effect

URN to cite this document:: urn:nbn:de:bvb:355-epub-18146
DOI to cite this document:: 10.5283/epub.1814

Tse, Wang-Kong ; Fabian, Jaroslav

; Zutic, Igor ; Sarma, S. Das

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Date of publication of this fulltext: 05 Aug 2009 13:33

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Abstract

The drift-diffusion formalism for spin-polarized carrier transport in semiconductors is generalized to include spin-orbit coupling. The theory is applied to treat the extrinsic spin Hall effect using realistic boundary conditions. It is shown that carrier and spin-diffusion lengths are modified by the presence of spin-orbit coupling and that spin accumulation due to the extrinsic spin Hall effect ...