Go to content
UR Home

Spin accumulation in the extrinsic spin Hall effect

URN to cite this document:
DOI to cite this document:
Tse, Wang-Kong ; Fabian, Jaroslav ; Zutic, Igor ; Sarma, S. Das
PDF - Published Version
Date of publication of this fulltext: 05 Aug 2009 13:33


The drift-diffusion formalism for spin-polarized carrier transport in semiconductors is generalized to include spin-orbit coupling. The theory is applied to treat the extrinsic spin Hall effect using realistic boundary conditions. It is shown that carrier and spin-diffusion lengths are modified by the presence of spin-orbit coupling and that spin accumulation due to the extrinsic spin Hall effect ...


Owner only: item control page
  1. Homepage UR

University Library

Publication Server


Publishing: oa@ur.de
0941 943 -4239 or -69394

Dissertations: dissertationen@ur.de
0941 943 -3904

Research data: datahub@ur.de
0941 943 -5707

Contact persons