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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-18146
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.1814
Zusammenfassung
The drift-diffusion formalism for spin-polarized carrier transport in semiconductors is generalized to include spin-orbit coupling. The theory is applied to treat the extrinsic spin Hall effect using realistic boundary conditions. It is shown that carrier and spin-diffusion lengths are modified by the presence of spin-orbit coupling and that spin accumulation due to the extrinsic spin Hall effect ...
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