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Numerical study of anharmonic vibrational decay in amorphous and paracrystalline silicon

URN to cite this document:
urn:nbn:de:bvb:355-epub-18263
DOI to cite this document:
10.5283/epub.1826
Fabian, Jaroslav ; Feldman, Joseph L. ; Hellberg, C. Stephen ; Nakhmanson, S. M.
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Date of publication of this fulltext: 05 Aug 2009 13:33


Abstract

The anharmonic decay rates of atomic vibrations in amorphous silicon (a-Si) and paracrystalline silicon (p-Si), containing small crystalline grains embedded in a disordered matrix, are calculated using realistic structural models. The models are 1000-atom four-coordinated networks relaxed to a local minimum of the Stillinger-Weber interatomic potential. The vibrational decay rates are calculated ...

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