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Proposal for all-electrical measurement of T1 in semiconductors

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Zutic, Igor ; Fabian, Jaroslav ; Sarma, S. Das
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Date of publication of this fulltext: 05 Aug 2009 13:33


In an inhomogeneously-doped magnetic semiconductor, spin relaxation time T1 can be determined by all-electrical measurements. Nonequilibrium spin injected in a magnetic p–n junction gives rise to the spin-voltaic effect, in which the nonequilibrium spin-induced charge current is very sensitive to T1 and can flow even at no applied bias. It is proposed that T1 can be determined by measuring the ...


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