Proposal for all-electrical measurement of T1 in semiconductors

URN to cite this document:: urn:nbn:de:bvb:355-epub-18272
DOI to cite this document:: 10.5283/epub.1827

Zutic, Igor ; Fabian, Jaroslav

; Sarma, S. Das

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Date of publication of this fulltext: 05 Aug 2009 13:33

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Abstract

In an inhomogeneously-doped magnetic semiconductor, spin relaxation time T1 can be determined by all-electrical measurements. Nonequilibrium spin injected in a magnetic p–n junction gives rise to the spin-voltaic effect, in which the nonequilibrium spin-induced charge current is very sensitive to T1 and can flow even at no applied bias. It is proposed that T1 can be determined by measuring the ...