Go to content
UR Home

Proposal for all-electrical measurement of T1 in semiconductors

URN to cite this document:
urn:nbn:de:bvb:355-epub-18272
Zutic, Igor ; Fabian, Jaroslav ; Sarma, S. Das
[img]
Preview
PDF - Published Version
(108kB)
Date of publication of this fulltext: 05 Aug 2009 13:33


Abstract

In an inhomogeneously-doped magnetic semiconductor, spin relaxation time T1 can be determined by all-electrical measurements. Nonequilibrium spin injected in a magnetic p–n junction gives rise to the spin-voltaic effect, in which the nonequilibrium spin-induced charge current is very sensitive to T1 and can flow even at no applied bias. It is proposed that T1 can be determined by measuring the ...

plus


Owner only: item control page
  1. Homepage UR

University Library

Publication Server

Contact:

Publishing: oa@ur.de

Dissertations: dissertationen@ur.de

Research data: daten@ur.de

Contact persons