Low-temperature electronic transport measurements on a gated delta -doped GaAs sample: magnetoresistance, quantum Hall effect and conductivity fluctuations

URN zum Zitieren dieses Dokuments: urn:nbn:de:bvb:355-epub-188020

Dötzer, R., Friedland, K. J., Hey, R., Kostial, H., Miehling, H. und Schoepe, Wilfried (1994) Low-temperature electronic transport measurements on a gated delta -doped GaAs sample: magnetoresistance, quantum Hall effect and conductivity fluctuations. Semiconductor Science and Technology 9 (7), S. 1332-1339.

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Zusammenfassung

We present magnetotransport measurements (up to 7 T) performed at very low temperatures (down to 20 mK) on a GaAs sample containing two parallel delta -doped layers whose carrier concentration can be varied by means of a gate electrode. With increasing negative gate voltage the resistance becomes more strongly temperature-dependent, indicating a more localized electron system. The ...

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