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Low-temperature electronic transport measurements on a gated delta -doped GaAs sample: magnetoresistance, quantum Hall effect and conductivity fluctuations

URN to cite this document:
Dötzer, R. ; Friedland, K. J. ; Hey, R. ; Kostial, H. ; Miehling, H. ; Schoepe, Wilfried
Date of publication of this fulltext: 17 Dec 2010 07:11


We present magnetotransport measurements (up to 7 T) performed at very low temperatures (down to 20 mK) on a GaAs sample containing two parallel delta -doped layers whose carrier concentration can be varied by means of a gate electrode. With increasing negative gate voltage the resistance becomes more strongly temperature-dependent, indicating a more localized electron system. The ...


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