Low-temperature electronic transport measurements on a gated delta -doped GaAs sample: magnetoresistance, quantum Hall effect and conductivity fluctuations

URN to cite this document:

urn:nbn:de:bvb:355-epub-188020 Copy

Dötzer, R. ; Friedland, K. J. ; Hey, R. ; Kostial, H. ; Miehling, H. ; Schoepe, Wilfried

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Date of publication of this fulltext: 17 Dec 2010 07:11

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Details

Item type:	Article
Journal or Publication Title:	Semiconductor Science and Technology
Publisher:	IOP Publ. (= Institute of Physics)
Volume:	9
Number of Issue or Book Chapter:	7
Page Range:	pp. 1332-1339
Date:	1994
Institutions:	Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Prof. Wilfried Schoepe
Identification Number:	Value Type 10.1088/0268-1242/9/7/006 DOI
Classification:	Notation Type 72.20.My Galvanomagnetic and other magnetotransport effects PACS 73.43.Qt Magnetoresistance PACS 72.80.Ey III-V and II-VI semiconductors PACS
Dewey Decimal Classification:	500 Science > 530 Physics
Status:	Published
Refereed:	Unknown
Created at the University of Regensburg:	Unknown
Item ID:	18802

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Abstract

We present magnetotransport measurements (up to 7 T) performed at very low temperatures (down to 20 mK) on a GaAs sample containing two parallel delta -doped layers whose carrier concentration can be varied by means of a gate electrode. With increasing negative gate voltage the resistance becomes more strongly temperature-dependent, indicating a more localized electron system. The ...

Abstract

We present magnetotransport measurements (up to 7 T) performed at very low temperatures (down to 20 mK) on a GaAs sample containing two parallel delta -doped layers whose carrier concentration can be varied by means of a gate electrode. With increasing negative gate voltage the resistance becomes more strongly temperature-dependent, indicating a more localized electron system. The magnetoresistance is found to be strongly anisotropic. When the field is parallel to the layers we find a large positive magnetoresistance which we attribute to orbital shrinking of the strongly localized donor wavefunction. In contrast, in the perpendicular orientation, we observe a strong negative magnetoresistance at low fields whose origin remains unclear, and the quantum Hall effect at larger fields. At low gate voltages both delta -layers are in the quantum Hall state whereas at larger negative voltages the layer adjacent to the gate becomes insulating. In the case of strong depletion the high-ohmic sample shows reproducible conductivity fluctuations as a function of either the gate voltage or the magnetic field. The fluctuations diminish at higher temperatures and larger measuring currents.

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Metadata last modified: 03 Jun 2018 12:18

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