Go to content
UR Home

Variable-range hopping conduction in doped germanium at very low temperatures and high magnetic fields

URN to cite this document:
urn:nbn:de:bvb:355-epub-188461
Schoepe, Wilfried
[img]
Preview
PDF
(736kB)
Date of publication of this fulltext: 21 Dec 2010 06:30


Abstract

The conductivity of doped Ge below the metal-insulator transition is measured at temperatures between 4 K and 40 mK and in magnetic fields up to 7 Tesla. In zero field the resistivity exponent diverges asT –1/2. In weak fields the magnetoresistance increases asB 2 and becomes exponentially large in strong fields and at low temperatures. The results can be described quantitatively in terms of ...

plus


Owner only: item control page
  1. Homepage UR

University Library

Publication Server

Contact:

Publishing: oa@ur.de

Dissertations: dissertationen@ur.de

Research data: daten@ur.de

Contact persons