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Variable-range hopping conduction in doped germanium at very low temperatures and high magnetic fields

URN to cite this document:
Schoepe, Wilfried
Date of publication of this fulltext: 21 Dec 2010 06:30


The conductivity of doped Ge below the metal-insulator transition is measured at temperatures between 4 K and 40 mK and in magnetic fields up to 7 Tesla. In zero field the resistivity exponent diverges asT –1/2. In weak fields the magnetoresistance increases asB 2 and becomes exponentially large in strong fields and at low temperatures. The results can be described quantitatively in terms of ...


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