The superconducting properties of amorphous W/Si multilayers are studied. A nearly linear increase of T(c) with increasing number of W/Si bilayers N is observed for N = 3 to 10. The parallel and perpendicular critical field data show strong interlayer coupling between the superconducting layers in a (1 nm Si/1 nm W) x 10 multilayer and weak coupling for a (5 nm Si/1 nm W) x 9 multilayer. The broadening of the resistive transition in perpendicular magnetic fields is analyzed within the frame of the thermally activated flux flow model. A temperature independent activation energy U is found for weakly coupled W/Si multilayers with a magnetic field dependence U approximately - 1n H.