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Theory of single electron spin relaxation in Si/SiGe lateral coupled quantum dots

URN to cite this document:
urn:nbn:de:bvb:355-epub-190950
DOI to cite this document:
10.5283/epub.19095
Raith, Martin ; Stano, Peter ; Fabian, Jaroslav
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Date of publication of this fulltext: 21 Jan 2011 14:07


Abstract

We investigate the spin relaxation induced by acoustic phonons in the presence of spin-orbit interactions in single electron Si/SiGe lateral coupled quantum dots. The relaxation rates are computed numerically in single and double quantum dots, in in-plane and perpendicular magnetic fields. The deformation potential of acoustic phonons is taken into account for both transverse and longitudinal ...

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