Terahertz emission and absorption at lateral electric field in p-GaAsN/GaAs and n-GaAs/AlGaAs heterostructures
Shalygin, Vadim, Firsov, D., Vorobjev, L., Sofronov, A., Panevin, V., Kozlov, D., Ganichev, Sergey, Danilov, Sergey, Andrianov, A., Zakhar'in, A., Zinov'ev, N., Egorov, A., Bondarenko, O. and Gladyshev, A. (2007) Terahertz emission and absorption at lateral electric field in p-GaAsN/GaAs and n-GaAs/AlGaAs heterostructures. Proc. 15th International Symposium Nanostructures: Physics and Technology, Novosibirsk, Russia. (Submitted)Date of publication of this fulltext: 05 Aug 2009 13:36
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| Item type | Article |
| Journal or Publication Title | Proc. 15th International Symposium Nanostructures: Physics and Technology, Novosibirsk, Russia |
| Date | 2007 |
| Institutions | Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev |
| Dewey Decimal Classification | 500 Science > 530 Physics |
| Status | Submitted |
| Refereed | Yes, this version has been refereed |
| Created at the University of Regensburg | Yes |
| Item ID | 2138 |
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