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The Infrared Spin-Galvanic Effect in Semiconductor Quantum Wells

Ganichev, Sergey (2004) The Infrared Spin-Galvanic Effect in Semiconductor Quantum Wells. Physica E 20, pp. 419-423.

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Date of publication of this fulltext: 05 Aug 2009 13:37

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Other URL: http://www.physik.uni-regensburg.de/forschung/ganichev/reprints/physicaE2004p419spingalvanicinfrared.pdf


Abstract

The spin-galvanic effect generated by homogeneous optical excitation with infrared circularly polarized radiation in quantum wells (QWs) is reviewed. The spin-galvanic current flow is driven by an asymmetric distribution of spin-polarized carriers in k-space of systems with lifted spin degeneracy due to k-linear terms in the Hamiltonian. Spin photocurrents provide methods to investigate the spin-splitting of the bandstructure and to make conclusion on the in-plane symmetry of QWs.


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Item type:Article
Date:2004
Institutions:Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Identification Number:
ValueType
10.1016/j.physe.2003.08.049DOI
Keywords:Spin-galvanic effect; Quantum well; Infrared; Spin orientation
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:2158
Owner only: item control page

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