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Ganichev, Sergey

The Infrared Spin-Galvanic Effect in Semiconductor Quantum Wells

Ganichev, Sergey (2004) The Infrared Spin-Galvanic Effect in Semiconductor Quantum Wells. Physica E 20, pp. 419-423.

Date of publication of this fulltext: 05 Aug 2009 13:37
Article
DOI to cite this document: 10.5283/epub.2158


Abstract

The spin-galvanic effect generated by homogeneous optical excitation with infrared circularly polarized radiation in quantum wells (QWs) is reviewed. The spin-galvanic current flow is driven by an asymmetric distribution of spin-polarized carriers in k-space of systems with lifted spin degeneracy due to k-linear terms in the Hamiltonian. Spin photocurrents provide methods to investigate the spin-splitting of the bandstructure and to make conclusion on the in-plane symmetry of QWs.



Involved Institutions


Details

Item typeArticle
Journal or Publication TitlePhysica E
Volume:20
Page Range:pp. 419-423
Date2004
InstitutionsPhysics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Identification Number
ValueType
10.1016/j.physe.2003.08.049DOI
KeywordsSpin-galvanic effect; Quantum well; Infrared; Spin orientation
Dewey Decimal Classification500 Science > 530 Physics
StatusPublished
RefereedYes, this version has been refereed
Created at the University of RegensburgYes
URN of the UB Regensburgurn:nbn:de:bvb:355-epub-21582
Item ID2158

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