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The Infrared Spin-Galvanic Effect in Semiconductor Quantum Wells
Ganichev, Sergey (2004) The Infrared Spin-Galvanic Effect in Semiconductor Quantum Wells. Physica E 20, pp. 419-423.Date of publication of this fulltext: 05 Aug 2009 13:37
Article
DOI to cite this document: 10.5283/epub.2158
Abstract
The spin-galvanic effect generated by homogeneous optical excitation with infrared circularly polarized radiation in quantum wells (QWs) is reviewed. The spin-galvanic current flow is driven by an asymmetric distribution of spin-polarized carriers in k-space of systems with lifted spin degeneracy due to k-linear terms in the Hamiltonian. Spin photocurrents provide methods to investigate the spin-splitting of the bandstructure and to make conclusion on the in-plane symmetry of QWs.
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| Item type | Article | ||||
| Journal or Publication Title | Physica E | ||||
| Volume: | 20 | ||||
|---|---|---|---|---|---|
| Page Range: | pp. 419-423 | ||||
| Date | 2004 | ||||
| Institutions | Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev | ||||
| Identification Number |
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| Keywords | Spin-galvanic effect; Quantum well; Infrared; Spin orientation | ||||
| Dewey Decimal Classification | 500 Science > 530 Physics | ||||
| Status | Published | ||||
| Refereed | Yes, this version has been refereed | ||||
| Created at the University of Regensburg | Yes | ||||
| URN of the UB Regensburg | urn:nbn:de:bvb:355-epub-21582 | ||||
| Item ID | 2158 |
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