Photogalvanic effects in quantum wells

URN to cite this document:: urn:nbn:de:bvb:355-epub-21828
DOI to cite this document:: 10.5283/epub.2182

Ganichev, Sergey ; Ivchenko, Eougenious ; Prettl, Wilhelm

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Date of publication of this fulltext: 05 Aug 2009 13:37

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Abstract

Circular and linear photogalvanic effects induced by far-infrared radiation have been investigated in both n-type and p-type quantum wells (QWs) of various point symmetry groups. The circular photogalvanic effect arises due to optical spin orientation of free carriers in QWs which results in a directed motion of free carriers in the plane of a QW perpendicular to the direction of light ...