Circular photogalvanic effect induced by monopolar spin orientation in p-GaAs/AlGaAs MQW

URN to cite this document:: urn:nbn:de:bvb:355-epub-22057
DOI to cite this document:: 10.5283/epub.2205

Ganichev, Sergey ; Ivchenko, Eougenious ; Ketterl, Hermann ; Prettl, Wilhelm ; Vorobjev, L.

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Date of publication of this fulltext: 05 Aug 2009 13:37

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Abstract

The circular photogalvanic effect (CPGE) has been observed in (100)-oriented p-GaAs/AlGaAs quantum wells at normal incidence of far-infrared radiation. It is shown that monopolar optical spin orientation of free carriers causes an electric current which reverses its direction upon changing from left to right circularly polarized radiation. CPGE at normal incidence and the occurrence of the linear ...