Characterization of deep impurities in semiconductors by terahertz tunneling ionization
Ganichev, Sergey, Ziemann, E., Yassievich, Irina, Perel, V. and Prettl, Wilhelm (2000) Characterization of deep impurities in semiconductors by terahertz tunneling ionization. In: European MRS - IUMRS - ICEM 2000: SYMPOSIUM M: Advanced Characterisation of Semiconductor Materials, 30. Mai – 2. Juni 2000, Strasbourg, France.Date of publication of this fulltext: 05 Aug 2009 13:39
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| Item type | Conference or workshop item (Other) |
| Page Range: | M/P15 |
|---|---|
| Date | 2000 |
| Institutions | Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev |
| Dewey Decimal Classification | 500 Science > 530 Physics |
| Status | Published |
| Refereed | Yes, this version has been refereed |
| Created at the University of Regensburg | Yes |
| Item ID | 2428 |
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