Go to content
UR Home

Tunnel ionization of deep impurities in semiconductors induced by terahertz electric fields

Ganichev, Sergey (1999) Tunnel ionization of deep impurities in semiconductors induced by terahertz electric fields. In: 20th International Conference on Defects in Semiconductors (ICDS-20) (invited), 26. - 30. Juli 1999, Berkeley, USA.

Full text not available from this repository.


Export bibliographical data



Item type:Conference or workshop item (UNSPECIFIED)
Date:1999
Institutions:Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:2431
Owner only: item control page
  1. Homepage UR

University Library

Publication Server

Contact:

Publishing: oa@ur.de

Dissertations: dissertationen@ur.de

Research data: daten@ur.de

Contact persons