Accumulation of carriers in a shallow donor excited state of GaP:Te

Conference or workshop item

Ganichev, Sergey, Yassievich, Irina, Raab, W., Zepezauer, E. and Prettl, Wilhelm (1997) Accumulation of carriers in a shallow donor excited state of GaP:Te. In: 19th International Conference on Defects in Semiconductors (ICDS-19), 21. - 25. Juli 1997, Aveiro, Porto, Portugal.

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Involved Institutions

• Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev

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Details

Item type	Conference or workshop item (UNSPECIFIED)
Page Range	p. 251
Date	1997
Date of publication	05 Aug 2009 13:39
Institutions	Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Dewey Decimal Classification	500 Science > 530 Physics
Status	Published
Refereed	Yes, this version has been refereed
Created at the University of Regensburg	Yes
Item ID	2453

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