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Long-living shallow donor excited states of GaP:Te

Ganichev, Sergey, Yassievich, Irina, Raab, W., Zepezauer, E. and Prettl, Wilhelm (1997) Long-living shallow donor excited states of GaP:Te. In: Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, 1997, Münster.

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Long-living shallow donor excited states in semiconductors existing forseveral miliseconds have been observed. Te-donors in GaP have been ionized by means of phonon assisted tunneling in the electric field of pulsed far-infrared laser radiation. The measurements have been carried out in the temperature range of 20-90 K using radiation of wavelength between 35 and 280 mm and intensities up to 1 ...


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Item type:Conference or workshop item (Speech)
Institutions:Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Dewey Decimal Classification:500 Science > 530 Physics
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:2455
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