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Long-living shallow donor excited states of GaP:Te

Ganichev, Sergey ; Yassievich, Irina ; Raab, W. ; Zepezauer, E. ; Prettl, Wilhelm


Long-living shallow donor excited states in semiconductors existing forseveral miliseconds have been observed. Te-donors in GaP have been ionized by means of phonon assisted tunneling in the electric field of pulsed far-infrared laser radiation. The measurements have been carried out in the temperature range of 20-90 K using radiation of wavelength between 35 and 280 mm and intensities up to 1 ...


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