Influence of near-zone field on photoresistive effect in bulk and delta-doped n-GaAs/metal tunnel junction
Kotel'nikov, I., Shul'man, A., Ganichev, Sergey and Prettl, Wilhelm (1996) Influence of near-zone field on photoresistive effect in bulk and delta-doped n-GaAs/metal tunnel junction. In: 2nd Russian Conference on Physics of Semiconductors, 1996, St. Petersburg, Russia, 2.Date of publication of this fulltext: 05 Aug 2009 13:39
Conference or workshop item
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| Item type | Conference or workshop item (UNSPECIFIED) |
| Page Range: | p. 179 |
|---|---|
| Date | 1996 |
| Institutions | Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev |
| Dewey Decimal Classification | 500 Science > 530 Physics |
| Status | Published |
| Refereed | Yes, this version has been refereed |
| Created at the University of Regensburg | Yes |
| Item ID | 2464 |
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