Go to content
UR Home

Influence of near-zone field on photoresistive effect in bulk and delta-doped n-GaAs/metal tunnel junction

Kotel'nikov, I., Shul'man, A., Ganichev, Sergey and Prettl, Wilhelm (1996) Influence of near-zone field on photoresistive effect in bulk and delta-doped n-GaAs/metal tunnel junction. In: 2nd Russian Conference on Physics of Semiconductors, 1996, St. Petersburg, Russia, 2.

Full text not available from this repository.


Export bibliographical data



Item type:Conference or workshop item (UNSPECIFIED)
Date:1996
Institutions:Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:2464
Owner only: item control page
  1. Homepage UR

University Library

Publication Server

Contact:

Publishing: oa@ur.de

Dissertations: dissertationen@ur.de

Research data: daten@ur.de

Contact persons