We present a few electron double quantum dot device defined in an isotopically purified Si-28 quantum well (QW). An electron mobility of 5.5 . 10(4)cm(2)(Vs)(-1) is observed in the QW, which is the highest mobility ever reported for a two-dimensional electron system in Si-28. The residual concentration of Si-29 nuclei in the Si-28 QW is lower than 10(3) ppm, at the verge where the hyperfine interaction is theoretically no longer expected to dominantly limit the T-2 spin dephasing time. We also demonstrate a complete suppression of hysteretic gate behavior and charge noise using a negatively biased global top gate. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3701588]