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Low-temperature photocarrier dynamics in monolayer MoS2

URN to cite this document:
urn:nbn:de:bvb:355-epub-265145
Korn, Tobias ; Heydrich, Stefanie ; Hirmer, Michael ; Schmutzler, Johannes ; Schüller, Christian
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Date of publication of this fulltext: 23 Oct 2012 06:38


Abstract

The band structure of MoS2 strongly depends on the number of layers, and a transition from indirect to direct-gap semiconductor has been observed recently for a single layer of MoS2. Single-layer MoS2 therefore becomes an efficient emitter of photoluminescence even at room temperature. Here, we report on scanning Raman and on temperature-dependent, as well as time-resolved photoluminescence ...

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