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Spin dynamics in high-mobility two-dimensional electron systems embedded in GaAs/AlGaAs quantum wells

Griesbeck, Michael (2012) Spin dynamics in high-mobility two-dimensional electron systems embedded in GaAs/AlGaAs quantum wells. PhD, Universität Regensburg.

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Date of publication of this fulltext: 12 Dec 2012 08:24

Abstract (English)

Since many years there has been great effort to explore the spin dynamics in low-dimensional electron systems embedded in GaAs/AlGaAs based heterostructures for the purpose of quantum computation and spintronics applications. Advances in technology allow for the design of high quality and well-defined two-dimensional electron systems (2DES), which are perfectly suited for the study of the ...

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Translation of the abstract (German)

Seit vielen Jahren werden unter der Zielsetzung das Quantencomputing oder spintronische Anwendungen zu realisieren große Anstrengungen unternommen, die Spindynamik in niederdimensionalen Elektronensystemen zu untersuchen, die in GaAs/AlGaAs basierte Heterostrukturen eingebettet sind. Technologische Fortschritte erlauben heutzutage dieHerstellung von hochwertigen und wohldefinierten ...

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Item type:Thesis of the University of Regensburg (PhD)
Date:12 December 2012
Referee:Prof. Dr. Christian Schüller
Date of exam:22 November 2012
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Lupton > Group Christian Schüller
Keywords:Spin dynamics, spin dephasing anisotropy, coherent spin dynamics, cyclotron effect on coherent spin precession, high-mobility two-dimensional electrons systems, time-resolved Kerr rotation, time-resolved Faraday rotation, resonant spin amplification, spin-orbit interaction, Rashba, Dresselhaus, III-V semiconductor, GaAs/AlGaAs quantum wells, spin relaxation, optical gating, dynamical nuclear polarization
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:27096
Owner only: item control page

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