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Detection of high power THz radiation by GaAs high electron mobility and Si field effect transistors

Drexler, C., Dyakonova, N., Schafberger, M., Kapierz, K., Karch, J., Videlier, H., Meziani, Y., Olbrich, P., Knap, W. and Ganichev, Sergey (2010) Detection of high power THz radiation by GaAs high electron mobility and Si field effect transistors. In: 35th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 5 - 10 Sept. 2010, Angelicum, Rome, Italy.

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Item type:Conference or workshop item (Other)
Date:2010
Institutions:Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Yes
Item ID:28398
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