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Experimental investigation of the optical spin-selection rules in bulk Si and Ge/Si quantum dots

URN to cite this document:
urn:nbn:de:bvb:355-epub-295804
DOI to cite this document:
10.5283/epub.29580
Sircar, N. ; Bougeard, Dominique
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Date of publication of this fulltext: 21 Mar 2014 06:58



Abstract

We study the relationship between the circular polarization of photoluminescence and the magnetic-field-induced spin polarization of the recombining charge carriers in bulk Si and Ge/Si quantum dots. First, we quantitatively compare experimental results on the degree of circular polarization of photons resulting from phonon-assisted radiative transitions in intrinsic and doped bulk Si with ...

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