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Giant enhancement of spin detection sensitivity in (Ga,Mn)As/GaAs Esaki diodes

URN to cite this document:
Shiogai, Junichi ; Ciorga, Mariusz ; Utz, Martin ; Schuh, Dieter ; Kohda, Makoto ; Bougeard, Dominique ; Nojima, Tsutomu ; Nitta, Junsaku ; Weiss, Dieter
Date of publication of this fulltext: 14 Mar 2014 14:34

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    Shiogai, Junichi, Ciorga, Mariusz, Utz, Martin, Schuh, Dieter, Kohda, Makoto, Bougeard, Dominique, Nojima, Tsutomu, Nitta, Junsaku and Weiss, Dieter (2014) Giant enhancement of spin detection sensitivity in (Ga,Mn)As/GaAs Esaki diodes. Physical Review B (PRB) 89, pp. 813071-813075. [Currently displayed]


We investigate the correlation between spin signals measured in three-terminal (3T) geometry by the Hanle effect and the spin accumulation generated in a semiconductor channel in a lateral (Ga,Mn)As/GaAs Esaki diode device. We systematically compare measurements using a 3T configuration, probing spin accumulation directly beneath the injecting contact, with results from nonlocal measurements, ...


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