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- URN to cite this document:
- urn:nbn:de:bvb:355-epub-296017
- DOI to cite this document:
- 10.5283/epub.29601
Abstract
We investigate the correlation between spin signals measured in three-terminal (3T) geometry by the Hanle effect and the spin accumulation generated in a semiconductor channel in a lateral (Ga,Mn)As/GaAs Esaki diode device. We systematically compare measurements using a 3T configuration, probing spin accumulation directly beneath the injecting contact, with results from nonlocal measurements, ...
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