Abstract
We present recent advances in the generation of highly intense multiterahertz transients and their application to nonlinear spectroscopy of bulk semiconductors. An optimized scheme of parametric amplification results in broadband single- or few-cycle terahertz transients with peak electric fields up to 10 or 25 MV/cm, respectively. Time-resolved four-wave mixing terahertz spectroscopy of InSb far ...
Abstract
We present recent advances in the generation of highly intense multiterahertz transients and their application to nonlinear spectroscopy of bulk semiconductors. An optimized scheme of parametric amplification results in broadband single- or few-cycle terahertz transients with peak electric fields up to 10 or 25 MV/cm, respectively. Time-resolved four-wave mixing terahertz spectroscopy of InSb far away from the interband resonance demonstrates clear signatures of a nonperturbative regime of Rabi flopping. We qualitatively explain the observed behavior within a model of a quantum two-level system. In addition, we demonstrate the dynamical Franz-Keldysh effect in InP resolved on a subcycle timescale. The field-induced modulation of the interband optical absorption at the second harmonic of the driving terahertz field is observed in full agreement with theoretical predictions.
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