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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-312563
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.31256
Alternative Links zum Volltext:DOI
Zusammenfassung
A different approach to calculate the I−V characteristics of p+(Ga,Mn)As/n+GaAs spin injectors is presented. The vanishing of the spin-extraction transmission coefficients at the spin-split valence-band edges leads us to predict a dip or plateau in the I−V characteristics of this kind of diodes. We show that this minimum, or the inflection point, shifts with the exchange energy. Within this ...
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