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- URN to cite this document:
- urn:nbn:de:bvb:355-epub-312563
- DOI to cite this document:
- 10.5283/epub.31256
Alternative links to fulltext:DOI
Abstract
A different approach to calculate the I-V characteristics of p(+)(Ga,Mn)As/n(+)GaAs spin injectors is presented. The vanishing of the spin-extraction transmission coefficients at the spin-split valence-band edges leads us to predict a dip or plateau in the I-V characteristics of this kind of diodes. We show that this minimum, or the inflection point, shifts with the exchange energy. Within this ...

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