Exchange energy and impurity band effects in the I-V characteristics of (Ga,Mn) As/GaAs spin injectors

URN to cite this document:: urn:nbn:de:bvb:355-epub-312563
DOI to cite this document:: 10.5283/epub.31256

Pereyra, Pedro

; Weiss, Dieter

Preview

PDF
(827kB)

Date of publication of this fulltext: 02 Feb 2015 12:35

Alternative links to fulltext:DOI

Details

Preview

Indexed in

Export bibliographical data

Abstract

A different approach to calculate the I-V characteristics of p(+)(Ga,Mn)As/n(+)GaAs spin injectors is presented. The vanishing of the spin-extraction transmission coefficients at the spin-split valence-band edges leads us to predict a dip or plateau in the I-V characteristics of this kind of diodes. We show that this minimum, or the inflection point, shifts with the exchange energy. Within this ...