Exchange energy and impurity band effects in the I-V characteristics of (Ga,Mn) As/GaAs spin injectors

URN to cite this document:: urn:nbn:de:bvb:355-epub-312563
DOI to cite this document:: 10.5283/epub.31256

Pereyra, Pedro ; Weiss, Dieter

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Date of publication of this fulltext: 02 Feb 2015 12:35

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Abstract

A different approach to calculate the I−V characteristics of p+(Ga,Mn)As/n+GaAs spin injectors is presented. The vanishing of the spin-extraction transmission coefficients at the spin-split valence-band edges leads us to predict a dip or plateau in the I−V characteristics of this kind of diodes. We show that this minimum, or the inflection point, shifts with the exchange energy. Within this ...