The tunneling anisotropic magnetothermopower (TAMT) and the tunneling anisotropic spin-Seebeck (TASS) effects are studied for a magnetic tunnel junction (MTJ) composed of a ferromagnetic electrode, a zinc-blende semiconductor, and a normal metal. We develop a theoretical model for describing the dependence of a thermally induced tunneling current across the MTJ on the in-plane orientation of the magnetization in the ferromagnetic layer. The model accounts for the specific Bychkov-Rashba and Dresselhaus spin-orbit interactions present in these systems, which are responsible for the C-2v symmetry we find in the TAMT and the TASS.