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Magnetooptical study of Zeeman effect in Mn modulation-doped InAs/InGaAs/InAlAs quantum well structures
Terent'ev, Ya. V., Danilov, Sergey, Plank, Helene, Loher, Josef, Schuh, Dieter, Bougeard, Dominique, Weiss, Dieter
, Durney, M. V., Tarasenko, Sergey, Rozhansky, I. V.
, Ivanov, S. V., Yakovlev, D. R.
und Ganichev, Sergey
(2015)
Magnetooptical study of Zeeman effect in Mn modulation-doped InAs/InGaAs/InAlAs quantum well structures.
Journal of Applied Physics 118, S. 113906.
Veröffentlichungsdatum dieses Volltextes: 17 Dez 2015 08:13
Artikel
DOI zum Zitieren dieses Dokuments: 10.5283/epub.33074
Zusammenfassung
We report on a magneto-photoluminescence (PL) study of Zeeman effect in Mn modulation-doped InAs/InGaAs/InAlAs quantum wells (QW). Two PL lines corresponding to the radiative recombination of photoelectrons with free and bound-on-Mn holes have been observed. In the presence of a magnetic field applied in the Faraday geometry, both lines split into two circularly polarized components. While ...
We report on a magneto-photoluminescence (PL) study of Zeeman effect in Mn modulation-doped InAs/InGaAs/InAlAs quantum wells (QW). Two PL lines corresponding to the radiative recombination of photoelectrons with free and bound-on-Mn holes have been observed. In the presence of a magnetic field applied in the Faraday geometry, both lines split into two circularly polarized components. While temperature and magnetic field dependence of the splitting are well described by the Brillouin function, providing an evidence for exchange interaction with spin polarized manganese ions, the value of the splitting exceeds by two orders of magnitude the value of the giant Zeeman splitting estimated for the average Mn density in QW obtained by the secondary ion mass spectroscopy. (C) 2015 AIP Publishing LLC.
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| Dokumentenart | Artikel | ||||
| Titel eines Journals oder einer Zeitschrift | Journal of Applied Physics | ||||
| Verlag: | AMER INST PHYSICS | ||||
|---|---|---|---|---|---|
| Ort der Veröffentlichung: | MELVILLE | ||||
| Band: | 118 | ||||
| Seitenbereich: | S. 113906 | ||||
| Datum | 18 September 2015 | ||||
| Institutionen | Physik > Institut für Experimentelle und Angewandte Physik > Professor Ganichev > Arbeitsgruppe Sergey Ganichev Physik > Institut für Experimentelle und Angewandte Physik > Lehrstuhl Professor Huber > Arbeitsgruppe Dominique Bougeard Physik > Institut für Experimentelle und Angewandte Physik > Lehrstuhl Professor Weiss > Arbeitsgruppe Dieter Weiss | ||||
| Identifikationsnummer |
| ||||
| Stichwörter / Keywords | SEMICONDUCTORS; (IN,MN)AS; INAS; | ||||
| Dewey-Dezimal-Klassifikation | 500 Naturwissenschaften und Mathematik > 530 Physik | ||||
| Status | Veröffentlicht | ||||
| Begutachtet | Ja, diese Version wurde begutachtet | ||||
| An der Universität Regensburg entstanden | Ja | ||||
| URN der UB Regensburg | urn:nbn:de:bvb:355-epub-330747 | ||||
| Dokumenten-ID | 33074 |
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