Direkt zum Inhalt

Bosisio, Riccardo ; Fleury, Geneviève ; Pichard, Jean-Louis ; Gorini, Cosimo

Nanowire-based thermoelectric ratchet in the hopping regime

Artikel

Bosisio, Riccardo, Fleury, Geneviève, Pichard, Jean-Louis und Gorini, Cosimo (2016) Nanowire-based thermoelectric ratchet in the hopping regime. Physical Review B (PRB) 93, S. 165404.

DOI zum Zitieren dieses Dokuments: 10.5283/epub.33602


Zusammenfassung

We study a thermoelectric ratchet consisting of an array of disordered nanowires arranged in parallel on top of an insulating substrate and contacted asymmetrically to two electrodes. Transport is investigated in the Mott hopping regime, when localized electrons can propagate through the nanowires via thermally assisted hops. When the electronic temperature in the nanowires is different from the ...

We study a thermoelectric ratchet consisting of an array of disordered nanowires arranged in parallel on top of an insulating substrate and contacted asymmetrically to two electrodes. Transport is investigated in the Mott hopping regime, when localized electrons can propagate through the nanowires via thermally assisted hops. When the electronic temperature in the nanowires is different from the phononic one in the substrate, we show that a finite electrical current is generated even in the absence of driving forces between the electrodes. We discuss the device performance both as an energy harvester, when an excess heat from the substrate is converted into useful power, and as a refrigerator, when an external power is supplied to cool down the substrate.



Beteiligte Einrichtungen


Details

DokumentenartArtikel
Titel eines Journals oder einer ZeitschriftPhysical Review B (PRB)
VerlagAMER PHYSICAL SOC
Open Access ArtSHERPA/RoMEO
Ort der VeröffentlichungCOLLEGE PK
Band93
SeitenbereichS. 165404
Datum4 April 2016
Veröffentlichungsdatum11 Apr 2016 13:55
InstitutionenPhysik > Institut für Theoretische Physik > Lehrstuhl Professor Richter > Arbeitsgruppe Klaus Richter
Identifikationsnummer
WertTyp
10.1103/PhysRevB.93.165404DOI
Stichwörter / KeywordsSILICON NANOWIRES; SEMICONDUCTOR NANOWIRES; THERMAL-CONDUCTIVITY; PERFORMANCE; EFFICIENCY; REDUCTION; FIGURE; MERIT;
Dewey-Dezimal-Klassifikation500 Naturwissenschaften und Mathematik > 530 Physik
StatusVeröffentlicht
BegutachtetJa, diese Version wurde begutachtet
An der Universität Regensburg entstandenJa
URN der UB Regensburgurn:nbn:de:bvb:355-epub-336020
Dokumenten-ID33602

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