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Bosisio, Riccardo ; Fleury, Geneviève ; Pichard, Jean-Louis ; Gorini, Cosimo

Nanowire-based thermoelectric ratchet in the hopping regime

Bosisio, Riccardo, Fleury, Geneviève, Pichard, Jean-Louis und Gorini, Cosimo (2016) Nanowire-based thermoelectric ratchet in the hopping regime. Physical Review B (PRB) 93, S. 165404.

Veröffentlichungsdatum dieses Volltextes: 11 Apr 2016 13:55
Artikel
DOI zum Zitieren dieses Dokuments: 10.5283/epub.33602


Zusammenfassung

We study a thermoelectric ratchet consisting of an array of disordered nanowires arranged in parallel on top of an insulating substrate and contacted asymmetrically to two electrodes. Transport is investigated in the Mott hopping regime, when localized electrons can propagate through the nanowires via thermally assisted hops. When the electronic temperature in the nanowires is different from the ...

We study a thermoelectric ratchet consisting of an array of disordered nanowires arranged in parallel on top of an insulating substrate and contacted asymmetrically to two electrodes. Transport is investigated in the Mott hopping regime, when localized electrons can propagate through the nanowires via thermally assisted hops. When the electronic temperature in the nanowires is different from the phononic one in the substrate, we show that a finite electrical current is generated even in the absence of driving forces between the electrodes. We discuss the device performance both as an energy harvester, when an excess heat from the substrate is converted into useful power, and as a refrigerator, when an external power is supplied to cool down the substrate.



Beteiligte Einrichtungen


Details

DokumentenartArtikel
Titel eines Journals oder einer ZeitschriftPhysical Review B (PRB)
Verlag:AMER PHYSICAL SOC
Ort der Veröffentlichung:COLLEGE PK
Band:93
Seitenbereich:S. 165404
Datum4 April 2016
InstitutionenPhysik > Institut für Theoretische Physik > Lehrstuhl Professor Richter > Arbeitsgruppe Klaus Richter
Identifikationsnummer
WertTyp
10.1103/PhysRevB.93.165404DOI
Stichwörter / KeywordsSILICON NANOWIRES; SEMICONDUCTOR NANOWIRES; THERMAL-CONDUCTIVITY; PERFORMANCE; EFFICIENCY; REDUCTION; FIGURE; MERIT;
Dewey-Dezimal-Klassifikation500 Naturwissenschaften und Mathematik > 530 Physik
StatusVeröffentlicht
BegutachtetJa, diese Version wurde begutachtet
An der Universität Regensburg entstandenJa
URN der UB Regensburgurn:nbn:de:bvb:355-epub-336020
Dokumenten-ID33602

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