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Thermoelectric Effects in Nanowire-Based MOSFETs

URN to cite this document:
urn:nbn:de:bvb:355-epub-350147
DOI to cite this document:
10.5283/epub.35014
Bosisio, Riccardo ; Fleury, Geneviève ; Gorini, Cosimo ; Pichard, Jean-Louis
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Date of publication of this fulltext: 02 Jan 2017 12:35



Abstract

We review a series of works describing thermoelectric effects in gated disordered nanowires (field effect transistor device configuration). After considering the elastic coherent regime characterizing sub-Kelvin temperatures, we study the inelastic activated regime occurring at higher temperatures, where electronic transport is dominated by phonon-assisted hops between localised states (Mott ...

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