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Thermoelectric Effects in Nanowire-Based MOSFETs

Bosisio, Riccardo, Fleury, Geneviève, Gorini, Cosimo and Pichard, Jean-Louis (2017) Thermoelectric Effects in Nanowire-Based MOSFETs. Advances in Physics: X 2, p. 344.

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Date of publication of this fulltext: 02 Jan 2017 12:35

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Abstract

We review a series of works describing thermoelectric effects in gated disordered nanowires (field effect transistor device configuration). After considering the elastic coherent regime characterizing sub-Kelvin temperatures, we study the inelastic activated regime occurring at higher temperatures, where electronic transport is dominated by phonon-assisted hops between localised states (Mott ...

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Item type:Article
Date:2017
Institutions:Physics > Institute of Theroretical Physics > Chair Professor Richter > Group Klaus Richter
Identification Number:
ValueType
1612.07581arXiv ID
10.1080/23746149.2017.1290547DOI
Related URLs:
URLURL Type
http://dx.doi.org/10.1080/23746149.2017.1290547Publisher
https://arxiv.org/abs/1612.07581Preprint
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Partially
Item ID:35014
Owner only: item control page

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