Direkt zum Inhalt

Terent'ev, Y. ; Danilov, Sergey ; Durnev, M. V. ; Loher, Josef ; Schuh, Dieter ; Bougeard, Dominique ; Ivanov, Dmitri ; Ganichev, Sergey

Determination of hole g-factor in InAs/InGaAs/InAlAs quantum wells by magneto-photoluminescence studies

Terent'ev, Y., Danilov, Sergey, Durnev, M. V., Loher, Josef, Schuh, Dieter, Bougeard, Dominique, Ivanov, Dmitri und Ganichev, Sergey (2017) Determination of hole g-factor in InAs/InGaAs/InAlAs quantum wells by magneto-photoluminescence studies. Journal of Applied Physics 121 (053904).

Veröffentlichungsdatum dieses Volltextes: 17 Mrz 2017 12:15
Artikel
DOI zum Zitieren dieses Dokuments: 10.5283/epub.35417


Zusammenfassung

A circularly polarized magneto-photoluminescence (magneto-PL) technique has been applied to investigate the Zeeman effect in InAs/InGaAs/InAlAs quantum wells (QWs) in the Faraday geometry. Structures with different thicknesses of the QW barriers have been studied in the magnetic field parallel and tilted with respect to the sample normal. The effective electron-hole g-factor has been found by ...

A circularly polarized magneto-photoluminescence (magneto-PL) technique has been applied to investigate the Zeeman effect in InAs/InGaAs/InAlAs quantum wells (QWs) in the Faraday geometry. Structures with different thicknesses of the QW barriers have been studied in the magnetic field parallel and tilted with respect to the sample normal. The effective electron-hole g-factor has been found by measurement of splitting of polarized magneto-PL lines. Lande factors of electrons have been calculated using the 14-band k.p method, and the g-factor of holes was determined by subtracting the calculated contribution of the electrons from the effective electron-hole g-factor. Anisotropy of the hole g-factor has been studied applying the tilted magnetic field. Published by AIP Publishing.



Beteiligte Einrichtungen


Details

DokumentenartArtikel
Titel eines Journals oder einer ZeitschriftJournal of Applied Physics
Verlag:AMER INST PHYSICS
Ort der Veröffentlichung:MELVILLE
Band:121
Nummer des Zeitschriftenheftes oder des Kapitels:053904
Datum6 Februar 2017
InstitutionenPhysik > Institut für Experimentelle und Angewandte Physik > Professor Ganichev > Arbeitsgruppe Sergey Ganichev
Physik > Institut für Experimentelle und Angewandte Physik > Lehrstuhl Professor Huber > Arbeitsgruppe Dominique Bougeard
Identifikationsnummer
WertTyp
10.1063/1.4975353DOI
Stichwörter / KeywordsELECTRON G-FACTOR; SEMICONDUCTOR NANOSTRUCTURES; TRANSPORT-PROPERTIES; INAS; PHOTOLUMINESCENCE; HETEROSTRUCTURE;
Dewey-Dezimal-Klassifikation500 Naturwissenschaften und Mathematik > 530 Physik
StatusVeröffentlicht
BegutachtetJa, diese Version wurde begutachtet
An der Universität Regensburg entstandenJa
URN der UB Regensburgurn:nbn:de:bvb:355-epub-354171
Dokumenten-ID35417

Bibliographische Daten exportieren

Nur für Besitzer und Autoren: Kontrollseite des Eintrags

nach oben