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Terent'ev, Y. ; Danilov, Sergey ; Durnev, M. V. ; Loher, Josef ; Schuh, Dieter ; Bougeard, Dominique ; Ivanov, Dmitri ; Ganichev, Sergey

Determination of hole g-factor in InAs/InGaAs/InAlAs quantum wells by magneto-photoluminescence studies

Article

Terent'ev, Y., Danilov, Sergey, Durnev, M. V., Loher, Josef, Schuh, Dieter, Bougeard, Dominique, Ivanov, Dmitri and Ganichev, Sergey (2017) Determination of hole g-factor in InAs/InGaAs/InAlAs quantum wells by magneto-photoluminescence studies. Journal of Applied Physics 121 (053904).

DOI to cite this document: 10.5283/epub.35417


Abstract

A circularly polarized magneto-photoluminescence (magneto-PL) technique has been applied to investigate the Zeeman effect in InAs/InGaAs/InAlAs quantum wells (QWs) in the Faraday geometry. Structures with different thicknesses of the QW barriers have been studied in the magnetic field parallel and tilted with respect to the sample normal. The effective electron-hole g-factor has been found by ...

A circularly polarized magneto-photoluminescence (magneto-PL) technique has been applied to investigate the Zeeman effect in InAs/InGaAs/InAlAs quantum wells (QWs) in the Faraday geometry. Structures with different thicknesses of the QW barriers have been studied in the magnetic field parallel and tilted with respect to the sample normal. The effective electron-hole g-factor has been found by measurement of splitting of polarized magneto-PL lines. Lande factors of electrons have been calculated using the 14-band k.p method, and the g-factor of holes was determined by subtracting the calculated contribution of the electrons from the effective electron-hole g-factor. Anisotropy of the hole g-factor has been studied applying the tilted magnetic field. Published by AIP Publishing.



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Details

Item typeArticle
Journal or Publication TitleJournal of Applied Physics
PublisherAMER INST PHYSICS
Open Access TypeDue to SHERPA/RoMEO
Place of PublicationMELVILLE
Volume121
Number of Issue or Book Chapter053904
Date6 February 2017
Date of publication17 Mar 2017 12:15
InstitutionsPhysics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard
Identification Number
ValueType
10.1063/1.4975353DOI
KeywordsELECTRON G-FACTOR; SEMICONDUCTOR NANOSTRUCTURES; TRANSPORT-PROPERTIES; INAS; PHOTOLUMINESCENCE; HETEROSTRUCTURE;
Dewey Decimal Classification500 Science > 530 Physics
StatusPublished
RefereedYes, this version has been refereed
Created at the University of RegensburgYes
URN of the UB Regensburgurn:nbn:de:bvb:355-epub-354171
Item ID35417

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