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Determination of hole g-factor in InAs/InGaAs/InAlAs quantum wells by magneto-photoluminescence studies
Terent'ev, Y., Danilov, Sergey, Durnev, M. V., Loher, Josef, Schuh, Dieter, Bougeard, Dominique, Ivanov, Dmitri und Ganichev, Sergey (2017) Determination of hole g-factor in InAs/InGaAs/InAlAs quantum wells by magneto-photoluminescence studies. Journal of Applied Physics 121 (053904).Veröffentlichungsdatum dieses Volltextes: 17 Mrz 2017 12:15
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DOI zum Zitieren dieses Dokuments: 10.5283/epub.35417
Zusammenfassung
A circularly polarized magneto-photoluminescence (magneto-PL) technique has been applied to investigate the Zeeman effect in InAs/InGaAs/InAlAs quantum wells (QWs) in the Faraday geometry. Structures with different thicknesses of the QW barriers have been studied in the magnetic field parallel and tilted with respect to the sample normal. The effective electron-hole g-factor has been found by ...
A circularly polarized magneto-photoluminescence (magneto-PL) technique has been applied to investigate the Zeeman effect in InAs/InGaAs/InAlAs quantum wells (QWs) in the Faraday geometry. Structures with different thicknesses of the QW barriers have been studied in the magnetic field parallel and tilted with respect to the sample normal. The effective electron-hole g-factor has been found by measurement of splitting of polarized magneto-PL lines. Lande factors of electrons have been calculated using the 14-band k.p method, and the g-factor of holes was determined by subtracting the calculated contribution of the electrons from the effective electron-hole g-factor. Anisotropy of the hole g-factor has been studied applying the tilted magnetic field. Published by AIP Publishing.
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| Dokumentenart | Artikel | ||||
| Titel eines Journals oder einer Zeitschrift | Journal of Applied Physics | ||||
| Verlag: | AMER INST PHYSICS | ||||
|---|---|---|---|---|---|
| Ort der Veröffentlichung: | MELVILLE | ||||
| Band: | 121 | ||||
| Nummer des Zeitschriftenheftes oder des Kapitels: | 053904 | ||||
| Datum | 6 Februar 2017 | ||||
| Institutionen | Physik > Institut für Experimentelle und Angewandte Physik > Professor Ganichev > Arbeitsgruppe Sergey Ganichev Physik > Institut für Experimentelle und Angewandte Physik > Lehrstuhl Professor Huber > Arbeitsgruppe Dominique Bougeard | ||||
| Identifikationsnummer |
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| Stichwörter / Keywords | ELECTRON G-FACTOR; SEMICONDUCTOR NANOSTRUCTURES; TRANSPORT-PROPERTIES; INAS; PHOTOLUMINESCENCE; HETEROSTRUCTURE; | ||||
| Dewey-Dezimal-Klassifikation | 500 Naturwissenschaften und Mathematik > 530 Physik | ||||
| Status | Veröffentlicht | ||||
| Begutachtet | Ja, diese Version wurde begutachtet | ||||
| An der Universität Regensburg entstanden | Ja | ||||
| URN der UB Regensburg | urn:nbn:de:bvb:355-epub-354171 | ||||
| Dokumenten-ID | 35417 |
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