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Determination of hole g-factor in InAs/InGaAs/InAlAs quantum wells by magneto-photoluminescence studies
Article
Terent'ev, Y., Danilov, Sergey, Durnev, M. V., Loher, Josef, Schuh, Dieter, Bougeard, Dominique, Ivanov, Dmitri and Ganichev, Sergey (2017) Determination of hole g-factor in InAs/InGaAs/InAlAs quantum wells by magneto-photoluminescence studies. Journal of Applied Physics 121 (053904).DOI to cite this document: 10.5283/epub.35417
Abstract
A circularly polarized magneto-photoluminescence (magneto-PL) technique has been applied to investigate the Zeeman effect in InAs/InGaAs/InAlAs quantum wells (QWs) in the Faraday geometry. Structures with different thicknesses of the QW barriers have been studied in the magnetic field parallel and tilted with respect to the sample normal. The effective electron-hole g-factor has been found by ...
A circularly polarized magneto-photoluminescence (magneto-PL) technique has been applied to investigate the Zeeman effect in InAs/InGaAs/InAlAs quantum wells (QWs) in the Faraday geometry. Structures with different thicknesses of the QW barriers have been studied in the magnetic field parallel and tilted with respect to the sample normal. The effective electron-hole g-factor has been found by measurement of splitting of polarized magneto-PL lines. Lande factors of electrons have been calculated using the 14-band k.p method, and the g-factor of holes was determined by subtracting the calculated contribution of the electrons from the effective electron-hole g-factor. Anisotropy of the hole g-factor has been studied applying the tilted magnetic field. Published by AIP Publishing.
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| Item type | Article | ||||
| Journal or Publication Title | Journal of Applied Physics | ||||
| Publisher | AMER INST PHYSICS | ||||
| Open Access Type | Due to SHERPA/RoMEO | ||||
| Place of Publication | MELVILLE | ||||
| Volume | 121 | ||||
| Number of Issue or Book Chapter | 053904 | ||||
| Date | 6 February 2017 | ||||
| Date of publication | 17 Mar 2017 12:15 | ||||
| Institutions | Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard | ||||
| Identification Number |
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| Keywords | ELECTRON G-FACTOR; SEMICONDUCTOR NANOSTRUCTURES; TRANSPORT-PROPERTIES; INAS; PHOTOLUMINESCENCE; HETEROSTRUCTURE; | ||||
| Dewey Decimal Classification | 500 Science > 530 Physics | ||||
| Status | Published | ||||
| Refereed | Yes, this version has been refereed | ||||
| Created at the University of Regensburg | Yes | ||||
| URN of the UB Regensburg | urn:nbn:de:bvb:355-epub-354171 | ||||
| Item ID | 35417 |
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