Oscillating Magnetoresistance in Graphene p–n Junctions at Intermediate Magnetic Fields

DOI to cite this document:: 10.5283/epub.35696

Overweg, Hiske ; Eggimann, Hannah

; Liu, Ming-Hao

; Varlet, Anastasia ; Eich, Marius ; Simonet, Pauline ; Lee, Yongjin ; Watanabe, Kenji

; Taniguchi, Takashi ; Richter, Klaus ; Fal’ko, Vladimir I. ; Ensslin, Klaus ; Ihn, Thomas

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Date of publication of this fulltext: 29 May 2017 11:28

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Abstract

We report on the observation of magnetoresistance oscillations in graphene p-n junctions. The oscillations have been observed for six samples, consisting of single-layer and bilayer graphene, and persist up to temperatures of 30 K, where standard Shubnikov-de Haas oscillations are no longer discernible. The oscillatory magnetoresistance can be reproduced by tight-binding simulations. We attribute this phenomenon to the modulated densities of states in the n- and p-regions.

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