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Oscillating Magnetoresistance in Graphene p–n Junctions at Intermediate Magnetic Fields

DOI to cite this document:
10.5283/epub.35696
Overweg, Hiske ; Eggimann, Hannah ; Liu, Ming-Hao ; Varlet, Anastasia ; Eich, Marius ; Simonet, Pauline ; Lee, Yongjin ; Watanabe, Kenji ; Taniguchi, Takashi ; Richter, Klaus ; Fal’ko, Vladimir I. ; Ensslin, Klaus ; Ihn, Thomas
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Date of publication of this fulltext: 29 May 2017 11:28



Abstract

We report on the observation of magnetoresistance oscillations in graphene p-n junctions. The oscillations have been observed for six samples, consisting of single-layer and bilayer graphene, and persist up to temperatures of 30 K, where standard Shubnikov-de Haas oscillations are no longer discernible. The oscillatory magnetoresistance can be reproduced by tight-binding simulations. We attribute this phenomenon to the modulated densities of states in the n- and p-regions.


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