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Designing 3D topological insulators by 2D-Xene (X = Ge, Sn) sheet functionalization in the GaGeTe-type structures

Pielnhofer, F., Menshchikova, I. , Rusinov, P., Zeugner, A., Sklyadneva, I. Yu., Heid, R. , Bohnen, K.-P., Golup, P., Baranov, I., Chulkov, Evgueni V., Pfitzner, Arno , Ruck, M. and Isaeva, A. (2017) Designing 3D topological insulators by 2D-Xene (X = Ge, Sn) sheet functionalization in the GaGeTe-type structures. J. Mater. Chem. C 5 (19), pp. 4752-4762.

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Date of publication of this fulltext: 06 Jul 2017 06:07

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Abstract

State-of-the-art theoretical studies anticipate a 2D Dirac system in the "heavy'' analogues of graphene, free-standing buckled honeycomb-like Xenes (X = Si, Ge, Sn, Pb, etc.). Herewith we regard a 2D sheet, which structurally and electronically resembles Xenes, in a 3D periodic, rhombohedral structure of layered AXTe (A = Ga, In; X = Ge, Sn) bulk materials. This structural family is predicted to ...

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Item type:Article
Date:2017
Institutions:Chemistry and Pharmacy > Institut für Anorganische Chemie > Chair Prof. Dr. Arno Pfitzner
Identification Number:
ValueType
10.1039/c7tc00390kDOI
Keywords:MIXED-BASIS APPROACH; SPIN HALL INSULATOR; ELECTRONIC-STRUCTURE; AB-INITIO; ZINTL PHASE; ENERGY; LOCALIZATION; GERMANANE; MOLECULES; CRYSTAL;
Dewey Decimal Classification:500 Science > 540 Chemistry & allied sciences
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:35804
Owner only: item control page

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