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Designing 3D topological insulators by 2D-Xene (X = Ge, Sn) sheet functionalization in the GaGeTe-type structures

URN to cite this document:
urn:nbn:de:bvb:355-epub-358044
DOI to cite this document:
10.5283/epub.35804
Pielnhofer, F. ; Menshchikova, I. ; Rusinov, P. ; Zeugner, A. ; Sklyadneva, I. Yu. ; Heid, R. ; Bohnen, K.-P. ; Golup, P. ; Baranov, I. ; Chulkov, Evgueni V. ; Pfitzner, Arno ; Ruck, M. ; Isaeva, A.
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Date of publication of this fulltext: 06 Jul 2017 06:07


Abstract

State-of-the-art theoretical studies anticipate a 2D Dirac system in the "heavy'' analogues of graphene, free-standing buckled honeycomb-like Xenes (X = Si, Ge, Sn, Pb, etc.). Herewith we regard a 2D sheet, which structurally and electronically resembles Xenes, in a 3D periodic, rhombohedral structure of layered AXTe (A = Ga, In; X = Ge, Sn) bulk materials. This structural family is predicted to ...

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