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Designing 3D topological insulators by 2D-Xene (X = Ge, Sn) sheet functionalization in the GaGeTe-type structures

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Pielnhofer, F. ; Menshchikova, I. ; Rusinov, P. ; Zeugner, A. ; Sklyadneva, I. Yu. ; Heid, R. ; Bohnen, K.-P. ; Golup, P. ; Baranov, I. ; Chulkov, Evgueni V. ; Pfitzner, Arno ; Ruck, M. ; Isaeva, A.
Date of publication of this fulltext: 06 Jul 2017 06:07


State-of-the-art theoretical studies anticipate a 2D Dirac system in the "heavy'' analogues of graphene, free-standing buckled honeycomb-like Xenes (X = Si, Ge, Sn, Pb, etc.). Herewith we regard a 2D sheet, which structurally and electronically resembles Xenes, in a 3D periodic, rhombohedral structure of layered AXTe (A = Ga, In; X = Ge, Sn) bulk materials. This structural family is predicted to ...


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