Spin field-effect transistor action via tunable polarization of the spin injection in a Co/MgO/graphene contact

URN to cite this document:: urn:nbn:de:bvb:355-epub-378273
DOI to cite this document:: 10.5283/epub.37827

Ringer, Sebastian ; Rosenauer, Matthias ; Völkl, Tobias ; Kadur, Maximilian ; Hopperdietzel, Franz ; Weiss, Dieter

; Eroms, Jonathan

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Date of publication of this fulltext: 09 Oct 2018 09:50

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Abstract

We fabricated a non-local spin valve device with Co-MgO injector/detector tunnel contacts on a graphene spin channel. In this device, the spin polarization of the injector contact can be tuned by both the injector current bias and the gate voltage. The spin polarization can be turned off and even inverted. This behavior enables a spin transistor where the signal is switched off by turning off the ...