Go to content
UR Home

Spin field-effect transistor action via tunable polarization of the spin injection in a Co/MgO/graphene contact

URN to cite this document:
DOI to cite this document:
Ringer, Sebastian ; Rosenauer, Matthias ; Völkl, Tobias ; Kadur, Maximilian ; Hopperdietzel, Franz ; Weiss, Dieter ; Eroms, Jonathan
Date of publication of this fulltext: 09 Oct 2018 09:50


We fabricated a non-local spin valve device with Co-MgO injector/detector tunnel contacts on a graphene spin channel. In this device, the spin polarization of the injector contact can be tuned by both the injector current bias and the gate voltage. The spin polarization can be turned off and even inverted. This behavior enables a spin transistor where the signal is switched off by turning off the ...


Owner only: item control page
  1. Homepage UR

University Library

Publication Server


Publishing: oa@ur.de
0941 943 -4239 or -69394

Dissertations: dissertationen@ur.de
0941 943 -3904

Research data: datahub@ur.de
0941 943 -5707

Contact persons