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Gate-tunable black phosphorus spin valve with nanosecond spin lifetimes

Avsar, Ahmet, Tan, Jun Y., Kurpas, Marcin , Gmitra, Martin , Watanabe, Kenji , Taniguchi, Takashi, Fabian, Jaroslav and Özyilmaz, Barbaros (2017) Gate-tunable black phosphorus spin valve with nanosecond spin lifetimes. Nature Physics 13 (9), pp. 888-893.

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Other URL: http://doi.org/10.1038/NPHYS4141


Abstract

Two-dimensional materials offer new opportunities for both fundamental science and technological applications, by exploiting the electron's spin. Although graphene is very promising for spin communication due to its extraordinary electron mobility, the lack of a bandgap restricts its prospects for semiconducting spin devices such as spin diodes and bipolar spin transistors. The recent emergence ...

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Item type:Article
Date:2017
Institutions:Physics > Institute of Theroretical Physics > Chair Professor Richter > Group Jaroslav Fabian
Identification Number:
ValueType
10.1038/NPHYS4141DOI
Keywords:FIELD-EFFECT TRANSISTORS; ROOM-TEMPERATURE; TRANSPORT; GRAPHENE; SPINTRONICS; INJECTION; SILICON; MOS2; SEMICONDUCTOR; ACCUMULATION;
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:39213
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