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Long-lived spin polarization in n-doped MoSe2 monolayers

Schwemmer, M. ; Nagler, P. ; Hanninger, A. ; Schüller, C. ; Korn, T.



Abstract

Transition metal dichalcogenide monolayers are highly interesting for potential valleytronic applications due to the coupling of spin and valley degrees of freedom and valley-selective excitonic transitions. However, ultrafast recombination of excitons in these materials poses a natural limit for applications so that a transfer of polarization to resident carriers is highly advantageous. Here, we ...

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