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Quantifying the critical thickness of electron hybridization in spintronics materials

Pincelli, T., Lollobrigida, V., Borgatti, F., Regoutz, A. , Gobaut, B. , Schlueter, C., Lee, T. -L., Payne, D. J., Oura, M., Tamasaku, K., Petrov, A. Y., Graziosi, P. , Granozio, F. Miletto, Cavallini, M., Vinai, G. , Ciprian, R. , Back, C. H. , Rossi, G., Taguchi, M., Daimon, H., van der Laan, G. and Panaccione, G. (2017) Quantifying the critical thickness of electron hybridization in spintronics materials. Nature Communications 8, p. 16051.

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Other URL: http://doi.org/10.1038/ncomms16051

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Abstract

In the rapidly growing field of spintronics, simultaneous control of electronic and magnetic properties is essential, and the perspective of building novel phases is directly linked to the control of tuning parameters, for example, thickness and doping. Looking at the relevant effects in interface-driven spintronics, the reduced symmetry at a surface and interface corresponds to a severe ...

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Item type:Article
Date:2017
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Back > Group Christian Back
Identification Number:
ValueType
10.1038/ncomms16051DOI
Keywords:METAL-INSULATOR-TRANSITION; LEVEL LINE-SHAPES; PHOTOEMISSION-SPECTROSCOPY; SPECTRA; TEMPERATURE; GA1-XMNXAS; MN; SEMICONDUCTORS; PHOTOELECTRON; PHASE;
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:39362
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