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Abstract
Proximity induced spin-orbit coupling effects in graphene on transition-metal dichalcogenides (TMD) have potential to bring graphene spintronics to the next level. Here we discuss electronic structure of graphene on monolayer MoS2, MoSe2, WS2 and WSe2. The Dirac electrons of graphene lie within the semiconducting gap and exhibit a giant global proximity spin-orbit coupling, without compromising ...
Abstract
Proximity induced spin-orbit coupling effects in graphene on transition-metal dichalcogenides (TMD) have potential to bring graphene spintronics to the next level. Here we discuss electronic structure of graphene on monolayer MoS2, MoSe2, WS2 and WSe2. The Dirac electrons of graphene lie within the semiconducting gap and exhibit a giant global proximity spin-orbit coupling, without compromising the semimetallic character. We found that graphene on MoS2, MoSe2, and WS2 has a topologically trivial band structure, while graphene on WSe2 exhibits inverted bands. Within the inverted regime the graphene zigzag nanoribbon hosts protected helical edge states demonstrating the quantum spin Hall effect, which opens a new route to access topological states of matter in graphene-based systems. Additionally the use of graphene/TMD vertical heterostructures serve as a promising platform for optospintronics, in particular for optical spin injection into graphene.
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