Vertical architecture for enhancement mode power transistors based on GaN nanowires
Yu, F., Rümmler, D., Hartmann, J., Caccamo, L., Schimpke, T., Strassburg, M., Gad, A. E., Bakin, A., Wehmann, H.-H., Witzigmann, B., Wasisto, H. S. and Waag, A. (2016) Vertical architecture for enhancement mode power transistors based on GaN nanowires. Applied Physics Letters 108 (21), p. 213503.Date of publication of this fulltext: 17 Mar 2020 11:26
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| Item type | Article | ||||
| Journal or Publication Title | Applied Physics Letters | ||||
| Volume: | 108 | ||||
|---|---|---|---|---|---|
| Number of Issue or Book Chapter: | 21 | ||||
| Page Range: | p. 213503 | ||||
| Date | 2016 | ||||
| Institutions | UNSPECIFIED | ||||
| Identification Number |
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| Dewey Decimal Classification | UNSPECIFIED | ||||
| Status | Published | ||||
| Refereed | Yes, this version has been refereed | ||||
| Created at the University of Regensburg | Yes | ||||
| Item ID | 42199 |
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