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Reprint of : Absorbing/Emitting Phonons with one dimensional MOSFETs

Bosisio, Riccardo ; Gorini, Cosimo ; Fleury, Geneviève ; Pichard, Jean-Louis



Abstract

We consider nanowires in the field effect transistor device configuration. Modeling each nanowire as a one dimensional lattice with random site potentials, we study the heat exchanges between the nanowire electrons and the substrate phonons, when electron transport is due to phonon-assisted hops between localized states. Shifting the nanowire conduction band with a metallic gate induces different ...

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