Characterization of reclaimed GaAs substrates and investigation of reuse for thin film InGaAlP LED epitaxial growth
Article
Englhard, M., Klemp, C., Behringer, M., Rudolph, A., Skibitzki, O., Zaumseil, P. and Schroeder, T. (2016) Characterization of reclaimed GaAs substrates and investigation of reuse for thin film InGaAlP LED epitaxial growth. Journal of Applied Physics 120 (4), 045301.Alternative links to fulltext
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Details
| Item type | Article | ||||
| Journal or Publication Title | Journal of Applied Physics | ||||
| Volume | 120 | ||||
| Number of Issue or Book Chapter | 4 | ||||
| Page Range | 045301 | ||||
| Date | 2016 | ||||
| Date of publication | 17 Mar 2020 11:34 | ||||
| Institutions | UNSPECIFIED | ||||
| Identification Number |
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| Dewey Decimal Classification | UNSPECIFIED | ||||
| Status | Published | ||||
| Refereed | Yes, this version has been refereed | ||||
| Created at the University of Regensburg | Yes | ||||
| Item ID | 42603 |
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