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Observation of Anomalously Strong Penetration of Terahertz Electric Field Through Terahertz-Opaque Gold Films Into a GaAs/AlGaAs Quantum Well
Ganichev, Sergey D., Danilov, Sergey N., Kronseder, Matthias
, Schuh, Dieter, Gronwald, Imke, Bougeard, Dominique, Ivchenko, E. L. and Shul'man, A. Ya.
(2020)
Observation of Anomalously Strong Penetration of Terahertz Electric Field Through Terahertz-Opaque Gold Films Into a GaAs/AlGaAs Quantum Well.
Journal of Infrared, Millimeter, and Terahertz Waves 41, pp. 957-978.
Date of publication of this fulltext: 20 Aug 2020 05:33
Article
DOI to cite this document: 10.5283/epub.43600
Abstract
We observe an anomalously high electric field of terahertz (THz) radiation acting on a two-dimensional electron gas (2DEG) placed beneath a thin gold film, which, however, is supposed to be opaque at THz frequencies. We show that the anomalously strong penetration of the THz electric field through a very high conductive gold film emerges if two conditions are fulfilled simultaneously: (i) the ...
We observe an anomalously high electric field of terahertz (THz) radiation acting on a two-dimensional electron gas (2DEG) placed beneath a thin gold film, which, however, is supposed to be opaque at THz frequencies. We show that the anomalously strong penetration of the THz electric field through a very high conductive gold film emerges if two conditions are fulfilled simultaneously: (i) the film's thickness is less than the skin depth and (ii) the THz electric field is measured beneath the film at distances substantially smaller than the radiation wavelength. We demonstrate that under these conditions, the strength of the field acting on a 2DEG is almost the same as it would be in the absence of the gold film. The effect is detected for macroscopically homogeneous perforation-free gold films illuminated by THz laser radiation with a spot smaller than the film area. This eliminates the near field of the edge diffraction as a possible cause of the anomalous penetration. The microscopic origin of the effect remains unexplained in its details, yet. The observed effect can be used for the development of THz devices based on two-dimensional materials requiring robust highly conducting top gates placed at less than nanometer distance from the electron gas location.
Involved Institutions
Details
| Item type | Article | ||||||
| Journal or Publication Title | Journal of Infrared, Millimeter, and Terahertz Waves | ||||||
| Publisher: | Springer | ||||||
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| Place of Publication: | NEW YORK | ||||||
| Volume: | 41 | ||||||
| Page Range: | pp. 957-978 | ||||||
| Date | 20 June 2020 | ||||||
| Additional Information (public) | "correction" nur aufgrund rückwirkender OpenAccess-Stellung | ||||||
| Institutions | Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard Physics > Institute of Experimental and Applied Physics > Prof. Jörg Wunderlich | ||||||
| Identification Number |
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| Keywords | OPTICAL-PROPERTIES; TRANSPORT; AU; Terahertz; Nanostructures; Thin metal films | ||||||
| Dewey Decimal Classification | 500 Science > 530 Physics | ||||||
| Status | Published | ||||||
| Refereed | Yes, this version has been refereed | ||||||
| Created at the University of Regensburg | Yes | ||||||
| URN of the UB Regensburg | urn:nbn:de:bvb:355-epub-436008 | ||||||
| Item ID | 43600 |
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