Observation of Anomalously Strong Penetration of Terahertz Electric Field Through Terahertz-Opaque Gold Films Into a GaAs/AlGaAs Quantum Well
Ganichev, Sergey D., Danilov, Sergey N., Kronseder, Matthias
, Schuh, Dieter, Gronwald, Imke, Bougeard, Dominique, Ivchenko, E. L. und Shul'man, A. Ya.
(2020)
Observation of Anomalously Strong Penetration of Terahertz Electric Field Through Terahertz-Opaque Gold Films Into a GaAs/AlGaAs Quantum Well.
Journal of Infrared, Millimeter, and Terahertz Waves 41, S. 957-978.
Veröffentlichungsdatum dieses Volltextes: 20 Aug 2020 05:33
Artikel
DOI zum Zitieren dieses Dokuments: 10.5283/epub.43600
Zusammenfassung
We observe an anomalously high electric field of terahertz (THz) radiation acting on a two-dimensional electron gas (2DEG) placed beneath a thin gold film, which, however, is supposed to be opaque at THz frequencies. We show that the anomalously strong penetration of the THz electric field through a very high conductive gold film emerges if two conditions are fulfilled simultaneously: (i) the ...
We observe an anomalously high electric field of terahertz (THz) radiation acting on a two-dimensional electron gas (2DEG) placed beneath a thin gold film, which, however, is supposed to be opaque at THz frequencies. We show that the anomalously strong penetration of the THz electric field through a very high conductive gold film emerges if two conditions are fulfilled simultaneously: (i) the film's thickness is less than the skin depth and (ii) the THz electric field is measured beneath the film at distances substantially smaller than the radiation wavelength. We demonstrate that under these conditions, the strength of the field acting on a 2DEG is almost the same as it would be in the absence of the gold film. The effect is detected for macroscopically homogeneous perforation-free gold films illuminated by THz laser radiation with a spot smaller than the film area. This eliminates the near field of the edge diffraction as a possible cause of the anomalous penetration. The microscopic origin of the effect remains unexplained in its details, yet. The observed effect can be used for the development of THz devices based on two-dimensional materials requiring robust highly conducting top gates placed at less than nanometer distance from the electron gas location.
Beteiligte Einrichtungen
Details
| Dokumentenart | Artikel | ||||||
| Titel eines Journals oder einer Zeitschrift | Journal of Infrared, Millimeter, and Terahertz Waves | ||||||
| Verlag: | Springer | ||||||
|---|---|---|---|---|---|---|---|
| Ort der Veröffentlichung: | NEW YORK | ||||||
| Band: | 41 | ||||||
| Seitenbereich: | S. 957-978 | ||||||
| Datum | 20 Juni 2020 | ||||||
| Zusätzliche Informationen (Öffentlich) | "correction" nur aufgrund rückwirkender OpenAccess-Stellung | ||||||
| Institutionen | Physik > Institut für Experimentelle und Angewandte Physik > Professor Ganichev > Arbeitsgruppe Sergey Ganichev Physik > Institut für Experimentelle und Angewandte Physik > Lehrstuhl Professor Huber > Arbeitsgruppe Dominique Bougeard Physik > Institut für Experimentelle und Angewandte Physik > Lehrstuhl Professor Huber > Arbeitsgruppe Dominique Bougeard Physik > Institut für Experimentelle und Angewandte Physik > Prof. Jörg Wunderlich | ||||||
| Identifikationsnummer |
| ||||||
| Stichwörter / Keywords | OPTICAL-PROPERTIES; TRANSPORT; AU; Terahertz; Nanostructures; Thin metal films | ||||||
| Dewey-Dezimal-Klassifikation | 500 Naturwissenschaften und Mathematik > 530 Physik | ||||||
| Status | Veröffentlicht | ||||||
| Begutachtet | Ja, diese Version wurde begutachtet | ||||||
| An der Universität Regensburg entstanden | Ja | ||||||
| URN der UB Regensburg | urn:nbn:de:bvb:355-epub-436008 | ||||||
| Dokumenten-ID | 43600 |
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