Direkt zum Inhalt

Ganichev, Sergey D. ; Danilov, Sergey N. ; Kronseder, Matthias ; Schuh, Dieter ; Gronwald, Imke ; Bougeard, Dominique ; Ivchenko, E. L. ; Shul'man, A. Ya.

Observation of Anomalously Strong Penetration of Terahertz Electric Field Through Terahertz-Opaque Gold Films Into a GaAs/AlGaAs Quantum Well

Ganichev, Sergey D., Danilov, Sergey N., Kronseder, Matthias , Schuh, Dieter, Gronwald, Imke, Bougeard, Dominique, Ivchenko, E. L. und Shul'man, A. Ya. (2020) Observation of Anomalously Strong Penetration of Terahertz Electric Field Through Terahertz-Opaque Gold Films Into a GaAs/AlGaAs Quantum Well. Journal of Infrared, Millimeter, and Terahertz Waves 41, S. 957-978.

Veröffentlichungsdatum dieses Volltextes: 20 Aug 2020 05:33
Artikel
DOI zum Zitieren dieses Dokuments: 10.5283/epub.43600


Zusammenfassung

We observe an anomalously high electric field of terahertz (THz) radiation acting on a two-dimensional electron gas (2DEG) placed beneath a thin gold film, which, however, is supposed to be opaque at THz frequencies. We show that the anomalously strong penetration of the THz electric field through a very high conductive gold film emerges if two conditions are fulfilled simultaneously: (i) the ...

We observe an anomalously high electric field of terahertz (THz) radiation acting on a two-dimensional electron gas (2DEG) placed beneath a thin gold film, which, however, is supposed to be opaque at THz frequencies. We show that the anomalously strong penetration of the THz electric field through a very high conductive gold film emerges if two conditions are fulfilled simultaneously: (i) the film's thickness is less than the skin depth and (ii) the THz electric field is measured beneath the film at distances substantially smaller than the radiation wavelength. We demonstrate that under these conditions, the strength of the field acting on a 2DEG is almost the same as it would be in the absence of the gold film. The effect is detected for macroscopically homogeneous perforation-free gold films illuminated by THz laser radiation with a spot smaller than the film area. This eliminates the near field of the edge diffraction as a possible cause of the anomalous penetration. The microscopic origin of the effect remains unexplained in its details, yet. The observed effect can be used for the development of THz devices based on two-dimensional materials requiring robust highly conducting top gates placed at less than nanometer distance from the electron gas location.



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Details

DokumentenartArtikel
Titel eines Journals oder einer ZeitschriftJournal of Infrared, Millimeter, and Terahertz Waves
Verlag:Springer
Ort der Veröffentlichung:NEW YORK
Band:41
Seitenbereich:S. 957-978
Datum20 Juni 2020
Zusätzliche Informationen (Öffentlich)"correction" nur aufgrund rückwirkender OpenAccess-Stellung
InstitutionenPhysik > Institut für Experimentelle und Angewandte Physik > Professor Ganichev > Arbeitsgruppe Sergey Ganichev
Physik > Institut für Experimentelle und Angewandte Physik > Lehrstuhl Professor Huber > Arbeitsgruppe Dominique Bougeard
Physik > Institut für Experimentelle und Angewandte Physik > Lehrstuhl Professor Huber > Arbeitsgruppe Dominique Bougeard
Physik > Institut für Experimentelle und Angewandte Physik > Prof. Jörg Wunderlich
Identifikationsnummer
WertTyp
10.1007/s10762-020-00717-yDOI
10.1007/s10762-021-00823-5DOI
Stichwörter / KeywordsOPTICAL-PROPERTIES; TRANSPORT; AU; Terahertz; Nanostructures; Thin metal films
Dewey-Dezimal-Klassifikation500 Naturwissenschaften und Mathematik > 530 Physik
StatusVeröffentlicht
BegutachtetJa, diese Version wurde begutachtet
An der Universität Regensburg entstandenJa
URN der UB Regensburgurn:nbn:de:bvb:355-epub-436008
Dokumenten-ID43600

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