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Ganichev, Sergey D. ; Danilov, Sergey N. ; Kronseder, Matthias ; Schuh, Dieter ; Gronwald, Imke ; Bougeard, Dominique ; Ivchenko, E. L. ; Shul'man, A. Ya.

Observation of Anomalously Strong Penetration of Terahertz Electric Field Through Terahertz-Opaque Gold Films Into a GaAs/AlGaAs Quantum Well

Ganichev, Sergey D., Danilov, Sergey N., Kronseder, Matthias , Schuh, Dieter, Gronwald, Imke, Bougeard, Dominique, Ivchenko, E. L. and Shul'man, A. Ya. (2020) Observation of Anomalously Strong Penetration of Terahertz Electric Field Through Terahertz-Opaque Gold Films Into a GaAs/AlGaAs Quantum Well. Journal of Infrared, Millimeter, and Terahertz Waves 41, pp. 957-978.

Date of publication of this fulltext: 20 Aug 2020 05:33
Article
DOI to cite this document: 10.5283/epub.43600


Abstract

We observe an anomalously high electric field of terahertz (THz) radiation acting on a two-dimensional electron gas (2DEG) placed beneath a thin gold film, which, however, is supposed to be opaque at THz frequencies. We show that the anomalously strong penetration of the THz electric field through a very high conductive gold film emerges if two conditions are fulfilled simultaneously: (i) the ...

We observe an anomalously high electric field of terahertz (THz) radiation acting on a two-dimensional electron gas (2DEG) placed beneath a thin gold film, which, however, is supposed to be opaque at THz frequencies. We show that the anomalously strong penetration of the THz electric field through a very high conductive gold film emerges if two conditions are fulfilled simultaneously: (i) the film's thickness is less than the skin depth and (ii) the THz electric field is measured beneath the film at distances substantially smaller than the radiation wavelength. We demonstrate that under these conditions, the strength of the field acting on a 2DEG is almost the same as it would be in the absence of the gold film. The effect is detected for macroscopically homogeneous perforation-free gold films illuminated by THz laser radiation with a spot smaller than the film area. This eliminates the near field of the edge diffraction as a possible cause of the anomalous penetration. The microscopic origin of the effect remains unexplained in its details, yet. The observed effect can be used for the development of THz devices based on two-dimensional materials requiring robust highly conducting top gates placed at less than nanometer distance from the electron gas location.



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Details

Item typeArticle
Journal or Publication TitleJournal of Infrared, Millimeter, and Terahertz Waves
Publisher:Springer
Place of Publication:NEW YORK
Volume:41
Page Range:pp. 957-978
Date20 June 2020
Additional Information (public)"correction" nur aufgrund rückwirkender OpenAccess-Stellung
InstitutionsPhysics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard
Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard
Physics > Institute of Experimental and Applied Physics > Prof. Jörg Wunderlich
Identification Number
ValueType
10.1007/s10762-020-00717-yDOI
10.1007/s10762-021-00823-5DOI
KeywordsOPTICAL-PROPERTIES; TRANSPORT; AU; Terahertz; Nanostructures; Thin metal films
Dewey Decimal Classification500 Science > 530 Physics
StatusPublished
RefereedYes, this version has been refereed
Created at the University of RegensburgYes
URN of the UB Regensburgurn:nbn:de:bvb:355-epub-436008
Item ID43600

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