Proximity Effects in Bilayer Graphene on Monolayer WSe2: Field-Effect Spin Valley Locking, Spin-Orbit Valve, and Spin Transistor

URN to cite this document:: urn:nbn:de:bvb:355-epub-438573
DOI to cite this document:: 10.5283/epub.43857

Gmitra, Martin

; Fabian, Jaroslav

Preview

PDF - Published Version
(831kB)

Date of publication of this fulltext: 08 Oct 2020 07:27

Alternative links to fulltext:DOI Publisher

Details

Preview

Export bibliographical data

Abstract

Proximity orbital and spin-orbit effects of bilayer graphene on monolayer WSe2 are investigated from first principles. We find that the built-in electric field induces an orbital band gap of about 10 meV in bilayer graphene. Remarkably, the proximity spin-orbit splitting for holes is 2 orders of magnitude—the spin-orbit splitting of the valence band at K is about 2 meV—more than for electrons. ...