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Terahertz optoelectronics in HgTe-based heterostructures
Hubmann, Stefan
(2020)
Terahertz optoelectronics in HgTe-based heterostructures.
PhD, Universität Regensburg.
Date of publication of this fulltext: 18 Dec 2020 09:05
Thesis of the University of Regensburg
DOI to cite this document: 10.5283/epub.44325
Abstract (English)
This work is devoted to studies of optoelectronic phenomena in HgTe QWs and CdHgTe induced by terahertz radiation.
Translation of the abstract (German)
In dieser Arbeit werden optoelektronische Phänomene in HgTe Quantentrögen und CdHgTe mithilfe von Terahertzstrahlung.
Involved Institutions
Details
| Item type | Thesis of the University of Regensburg (PhD) |
| Date | 18 December 2020 |
| Referee | Prof. Dr. Sergey Ganichev |
| Date of exam | 10 December 2020 |
| Institutions | Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev |
| Keywords | Terahertz. Physik, HgTe, CdHgTe, Impact ionization, photogalvanics |
| Dewey Decimal Classification | 500 Science > 530 Physics |
| Status | Published |
| Refereed | Yes, this version has been refereed |
| Created at the University of Regensburg | Yes |
| URN of the UB Regensburg | urn:nbn:de:bvb:355-epub-443258 |
| Item ID | 44325 |
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