Abstract
The study analyzed the effects of gamma-ray irradiation and high frequency on metal-polymer-semiconductor (MPS). The MPS structure is analyzed before and after gamma radiation source with dose of 30kGy and 60kGy, and the impacts of Co-60 gamma-ray irradiation on the electrical characteristics of Al/Coronene/p-Si schottky diode have been reported. It has been found that barrier height, the series ...
Abstract
The study analyzed the effects of gamma-ray irradiation and high frequency on metal-polymer-semiconductor (MPS). The MPS structure is analyzed before and after gamma radiation source with dose of 30kGy and 60kGy, and the impacts of Co-60 gamma-ray irradiation on the electrical characteristics of Al/Coronene/p-Si schottky diode have been reported. It has been found that barrier height, the series resistance and the density of the interface trap states strongly depend on applied gamma irradiation dose and also the value of high frequency.
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