All-electrical creation and control of spin-galvanic signal in graphene and molybdenum ditelluride heterostructures at room temperature

URN to cite this document:: urn:nbn:de:bvb:355-epub-478002
DOI to cite this document:: 10.5283/epub.47800

Hoque, Anamul Md.

; Khokhriakov, Dmitrii

; Zollner, Klaus ; Zhao, Bing

; Karpiak, Bogdan ; Fabian, Jaroslav

; Dash, Saroj P.

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Date of publication of this fulltext: 10 Aug 2021 10:59

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Abstract

By using 2D materials heterostructures it is possible to exploit the properties of both materials at the interface, for instance, spin-dependent transport for application in spintronic devices. Here, using a heterostructure of MoTe2/Graphene the authors demonstrate a proximity induced spin-galvanic effect which can be controlled by the gate voltage. The ability to engineer new states of matter ...