| License: Creative Commons Attribution 4.0 PDF - Published Version (2MB) |
- URN to cite this document:
- urn:nbn:de:bvb:355-epub-478002
- DOI to cite this document:
- 10.5283/epub.47800
Abstract
The ability to engineer new states of matter and control their spintronic properties by electric fields is at the heart of future information technology. Here, we report a gate-tunable spin-galvanic effect in van der Waals heterostructures of graphene with a semimetal of molybdenum ditelluride at room temperature due to an efficient spin-charge conversion process. Measurements in different device ...

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