Tornos, J. ; Gallego, F. ; Valencia, S. ; Liu, Y. H. 
; Rouco, V. ; Lauter, V. ; Abrudan, R. ; Luo, C. ; Ryll, H. ; Wang, Q. ; Hernandez-Martin, D. ; Orfila, G. ; Cabero, M. ; Cuellar, F. ; Arias, D. ; Mompean, F. J. ; Garcia-Hernandez, M. ; Radu, F. ; Charlton, T. R. ; Rivera-Calzada, A. ; Sefrioui, Z. ; te Velthuis, S. G. E. ; Leon, C. ; Santamaria, J.
; Rouco, V. ; Lauter, V. ; Abrudan, R. ; Luo, C. ; Ryll, H. ; Wang, Q. ; Hernandez-Martin, D. ; Orfila, G. ; Cabero, M. ; Cuellar, F. ; Arias, D. ; Mompean, F. J. ; Garcia-Hernandez, M. ; Radu, F. ; Charlton, T. R. ; Rivera-Calzada, A. ; Sefrioui, Z. ; te Velthuis, S. G. E. ; Leon, C. ; Santamaria, J. 
Zusammenfassung
The electronic reconstruction occurring at oxide interfaces may be the source of interesting device concepts for future oxide electronics. Among oxide devices, multiferroic tunnel junctions are being actively investigated as they offer the possibility to modulate the junction current by independently controlling the switching of the magnetization of the electrodes and of the ferroelectric ...
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