Abstract
In this paper, we show that electron states formed in topological insulators at the interfaces topological phase-trivial phase and topological phase-vacuum may possess different properties. This is demonstrated on an example of heterostructures based on thick topological Hg1-xCdxTe films, in which the PT-symmetric terahertz photoconductivity is observed. It is shown that the effect originates ...
Abstract
In this paper, we show that electron states formed in topological insulators at the interfaces topological phase-trivial phase and topological phase-vacuum may possess different properties. This is demonstrated on an example of heterostructures based on thick topological Hg1-xCdxTe films, in which the PT-symmetric terahertz photoconductivity is observed. It is shown that the effect originates from features of the interface topological film-trivial buffer/cap layer. The PT-symmetric terahertz photoconductivity is not provided by electron states formed at the interface topological film-vacuum.
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