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Atomic-Scale Engineering of the Electrostatic Landscape of Semiconductor Surfaces

Gohlke, David ; Mishra, Rohan ; Restrepo, Oscar D. ; Lee, Donghun ; Windl, Wolfgang ; Gupta, Jay



Abstract

A low-temperature scanning tunneling microscope was used in conjunction with density functional theory calculations to determine the binding sites and charge states of adsorbed Ga and Mn atoms on GaAs(110). To quantify the adatom charge states (both +1e), the Coulomb interaction with an individual Mn acceptor is measured via tunneling spectroscopy and compared with theoretical predictions. ...

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