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Schwaiger, Stephan ; Metzner, Sebastian ; Wunderer, Thomas ; Argut, Ilona ; Thalmair, Johannes ; Lipski, Frank ; Wieneke, Matthias ; Bläsing, Jürgen ; Bertram, Frank ; Zweck, Josef ; Krost, Alois ; Christen, Jürgen ; Scholz, Ferdinand

Growth and coalescence behavior of semipolar $(11{\bar {2}}2)$ GaN on pre‐structured r‐plane sapphire substrates

Article

Schwaiger, Stephan, Metzner, Sebastian, Wunderer, Thomas, Argut, Ilona, Thalmair, Johannes, Lipski, Frank, Wieneke, Matthias, Bläsing, Jürgen, Bertram, Frank , Zweck, Josef, Krost, Alois, Christen, Jürgen and Scholz, Ferdinand (2011) Growth and coalescence behavior of semipolar $(11{\bar {2}}2)$ GaN on pre‐structured r‐plane sapphire substrates. physica status solidi (b) 248 (3), pp. 588-593.



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Details

Item typeArticle
Journal or Publication Titlephysica status solidi (b)
PublisherWILEY-BLACKWELL
Place of PublicationMALDEN
Volume248
Number of Issue or Book Chapter3
Page Rangepp. 588-593
Date2011
Date of publication19 Dec 2024 11:13
InstitutionsPhysics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Chair Professor Back > Group Josef Zweck
Identification Number
ValueType
10.1002/pssb.201046336DOI
KeywordsGALLIUM NITRIDE FILMS; SIDE FACETS; LAYERS; semipolar GaN; patterned sapphire; MOVPE; coalescence; marker layer
Dewey Decimal Classification500 Science > 530 Physics
StatusPublished
RefereedYes, this version has been refereed
Created at the University of RegensburgYes
Item ID65168

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