Abstract
Determination of compositions in multiple quantum well structures is a critical issue. Until now only few experimental description of determination of concentrations in the nonpolar m-or a-direction in III-nitrides by means of X-ray diffraction has been published. Using the example of GaInN/GaN multiple quantum well structures we present different methods to determine the indium concentration. ...
Abstract
Determination of compositions in multiple quantum well structures is a critical issue. Until now only few experimental description of determination of concentrations in the nonpolar m-or a-direction in III-nitrides by means of X-ray diffraction has been published. Using the example of GaInN/GaN multiple quantum well structures we present different methods to determine the indium concentration. After presenting the relevant elasticity relations we adopt a step model introduced by Segmuller and Blakeslee to nonpolar directions. This model allows a simulation of symmetrical 2 theta-omega scans. We will discuss the possibilities and also the limitations of this model. Additionally, we present a method to determine concentrations by using the peak position of the zero order superlattice peak. Finally, we compare the methods using samples grown on m-plane SiC and bulk m-plane GaN. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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